VeriSilicon and MoSys Announce Collaboration to Drive Adoption of 1T-SRAM(R) Embedded Memory Technology for Customer System-On-Chip Designs

VeriSilicon and MoSys Announce Collaboration to Drive Adoption of 1T-SRAM(R) Embedded Memory Technology for Customer System-On-Chip Designs

November 16, 2006

    SANTA CLARA, Calif. and SUNNYVALE, Calif., Nov. 16
/Xinhua-PRNewswire/ -- VeriSilicon Holdings Co., Ltd.
(VeriSilicon), a leading world class ASIC design foundry
and semiconductor IP provider, and MoSys, Inc. (Nasdaq:
MOSY), the industry's leading provider of high density
system-on-chip (SoC) embedded memory solutions, today
announced the companies are partnering to further expand
the adoption of MoSys' popular 1T-SRAM technology by
providing VeriSilicon' customers seamless access to the
patented technology.

    Under the terms of the partnership, VeriSilicon will
add the 1T-SRAM capability to its intellectual property
(IP) portfolio offering, for use into customer SoC designs,
on multiple foundries.

    VeriSilicon is a fabless ASIC design foundry focusing
on providing best-in-class vertical platform solutions,
system knowledge and services to help SoC customers go from
chip specification to production.  Under the partnership,
customers now have the option to work directly with
VeriSilicon to integrate MoSys' innovative memory
technology into their designs across a wide range of
foundry options and advanced process geometries, such as 90
nm.  By leveraging MoSys' patented 1T-SRAM ultra high
density memory offering, customers are able to
significantly lower their silicon costs while maintaining
high performance and low power. 

    "We are very happy to work with VeriSilicon to
proliferate our technology to a wider range of customers. 
Over the last few years, VeriSilicon has garnered numerous
industry awards by amassing a successful track record
across impressive world wide customer base.  Our
expectation is that the combination of our pioneering
memory technology and VeriSilicon leading ASIC capabilities
will result in uniquely optimal silicon solutions for
numerous types of applications," said Chet Silvestri,
chief executive officer of MoSys.

    "Our collaboration with MoSys represents
VerSilicon's commitment to provide customers a
one-stop-shop for their IP and turnkey needs.  By working
with a technology leader like MoSys, our customers can also
leverage our other IP products and design services to
develop ultra-competitive solutions in terms of silicon
area and power to meet their most demanding product
requirements," said Federico Arcelli, Corporate
vice-president of WW sales & marketing at VeriSilicon.

    About VeriSilicon

    VeriSilicon Holdings Co., Ltd. is a leading world class
ASIC design foundry providing libraries, semiconductor IPs,
design and turnkey manufacturing services with multi-fab
capability supporting process technologies down to 90nm.
VeriSilicon has achieved first silicon success and entered
volume production of many complex, multi-million gates SoCs
using the leading wafer foundries in APAC and China.
VeriSilicon has operations in US, China, Taiwan, Japan,
France, and Korea. Over 500 customers worldwide have
licensed VeriSilicon IPs and Standard Design Platforms. In
2005, VeriSilicon was ranked number three in Deloitte
Technology Fast 50 China, the top 50 fastest-growing
technology companies in China and number six in Deloitte
Fast 500 Asia Pacific, the top 500 fastest-growing
technology companies in Asia Pacific. VeriSilicon was also
named one of the Red Herring 100 Private Companies of Asia,
and selected as one of the EE Times 60 Emerging Startups.
More information is available at http://www.verisilicon.com
.

    About MoSys Inc

    Founded in 1991, MoSys develops, licenses and markets
innovative memory technologies for semiconductors. MoSys'
patented 1T-SRAM technologies offer a combination of high
density, low power consumption, high speed and low cost
unmatched by other available memory technologies. The
single transistor bit cell used in 1T-SRAM memory results
in the technology achieving much higher density than
traditional four or six transistor SRAMs while using the
same standard logic manufacturing processes. 1T-SRAM
technologies also offer the familiar, refresh-free
interface and high performance for random address access
cycles associated with traditional SRAMs. In addition,
these technologies can reduce operating power consumption
by a factor of four compared with traditional SRAM
technology, contributing to making them ideal for embedding
large memories in System on Chip (SoC) designs. MoSys'
licensees have shipped more than 100 million chips
incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range
of silicon processes and applications. MoSys is
headquartered at 755 N. Mathilda Avenue, Sunnyvale,
California 94085. More information is available on MoSys'
website at http://www.mosys.com . 

    For more information, please contact:

     Walter Croce 
     Director, 
     Marketing, MoSys
     Tel:   [phone]
     Email: [e-mail]

     Federico Arcelli
     Corporate VP, 
     WW Sales & Marketing
     Tel:   [phone]
     Email: [e-mail]

SOURCE  VeriSilicon Holdings Co., Ltd.